Ohmic contact for group iii-v p-type semiconductors

ABSTRACT

A COMBINATION OF GOLD-GERMANIUM OR GOLD-SILICON ALLOY AND ZINC OR OTHER METALLIC GROUP II ELEMENT PROVIDES AN ELECTRICAL CONTACT AND LOW-TEMPERATURE BONDING MATERIAL FOR P-TYPE SEMICONDUCTORS OF GROUP III-V SUCH AS GALLIUM ARSENIDE.

Jan. 8, 1974 co ETAI, Re. 27,879

OHMIC CONTACT FOR GROUP III-V P-TYPE SEMICONDUCTORS Original Filed Dec. 28, 1970 Fig. 3.

Figl.

lnven t'm-s: NeiL -E. CoLLins Ira E. Halft Their A'ttorneg United States Patent O 27,879 OHMIC CONTACT FOR GROUP III-V p-TYPE SEMICONDUCTORS Neil E. Collins, Richmond Heights, and Ira E. Halt,

Chesterland, Ohio, assignors to General Electric Coman origin al No. 3,684,930, dated Aug. 15, 1972, Ser. No. 101,971, Dec. 28, 1970. Application for reissue Feb. 21, 1973, Ser. No. 334,237

Int. Cl. H01l 1/14 US. Cl. 317234 R 14 Claims Matter enclosed in heavy brackets 1 appears in the original patent but forms no part of this reissue specification; matter printed in italics indicates the additions made by reissue.

ABSTRACT OF THE DISCLOSURE A combination of gold-germanium or gold-silicon alloy and zinc or other metallic Group II element provides an electrical contact and low-temperature bonding material for p-type semiconductors of Group IIIV such as gallium arsenide.

BACKGROUND OF THE INVENTION The invention is in the field of making ohmic contacts on semiconductor materials, and bonding the ohmic contact to a header. More particularly, the invention relates to ohmic contacts and bonding for Group IIIV p-type semiconductors such as gallium arsenide.

Light-emitting diodes, i.e., solid-state lamps, are one type of device, among others, which make use of p-type semiconductor material. A light-emitting diode may comprise a p-n junction, which emits light when current is passed therethrough, formed at the junction of ptype and an n-type semiconductor material such as gallium arsenide. The p-typc and n-type regions are formed by doping the basic material with certain impurities in a suitable process, such as diffusion or epitaxial growth. In manufacture, a thin water of the basic material, such as gallium arsenide, is processed to form a p-n junction between and parallel to the larger faces of the wafer, and the wafer is then severed into a plurality of pellets each pellet containing a p-n junction. Each pellet is then assembled into a lamp housing, making suitable electrical connections to the p-side and n-side thereof so that current can be made to flow through the p-n junction for causing light to be emitted. One way of accomplishing this is to place the pellet, p-side down, on a gold-plated Kovar header, and heat to over 500 C. to cause the pellet to fuse to the gold-plated header. A small dot" contact is made to the n-side of the pellet, to complete the electrical connections; the header provides electrical connection to the p-side of the pellet. The aforesaid heating of the assembly to fuse the pellet to the header undesirably tends to reduce the light-emitting capability of the diode, and reduction of the temperature employed for the fusing tends to result in unsatisfactory bonding of the diode pellet to the header.

SUMMARY OF THE INVENTION Objects of the invention are to provide an improved electrical contact and bonding material and method for p-type Group IIIV semiconductors, and to make the electrical contact and bonding by the use of lower temperatures than heretofore.

The invention comprises, briefly and in a preferred embodiment, a contact and bonding material for p-type Group III-V semiconductors, such as gallium arsenide, comprising a combination of goldgermanium or goldsilicon alloy (preferably the eutectic) and a Group II metallic element such as zinc. Preferably, the Group II metallic element is zinc and is about 1 to 15 percent by weight of the gold-germanium eutectic alloy. A preferred method of manufacture comprises the steps of depositing a layer of gold-germanium eutectic alloy onto a p-type surface of a wafer of Group IIIV semiconductor material, depositing a layer of a Group II metallic element over the eutectic alloy layer, heating to sinter the deposited layers into the p-type surface of the wafer, severing the wafer into pellets, placing a pellet p-side down on a gold-plated header, and heating momentarily to fuse the pellet to the header.

BRIEF DESCRIPTION OF THE DRAWING FIG. 1 is a cross-sectional view of a vacuum evaporation chamber, in which the electrical contact and bonding material of the invention is formed on a p-surface of a semiconductor wafer;

FIG. 2 is a side view showing the wafer, with evaporated materials thereon, being heated on an electrically heated strip heater;

FIG. 3 is a perspective view of the wafer after the deposited materials have been fused into the p-surface thereof as illustrated in FIG. 2;

FIG. 4 is a perspective view of the wafer after the surface thereof has been scribed so that the water may be severed into a plurality of pellets;

FIG. 5 is a side view of a pellet, placed p-side down on a header;

FIG. 6 is a perspective view of the pellet on a header; and

FIG. 7 is a perspective view of a solid-state lamp hav ing a lens housing attached to the header assembly of FIG. 6.

DESCRIPTION OF THE PREFERRED EMBODIMENT The vacuum evaporation apparatus of FIG. 1 consists of a base plate 11 provided with a vacuum port 12, and a cover 13, preferably of glass, which fits onto the base 11 in a vacuum tight manner. A wafer 14 having a p-type surface of Group IIIV, such as gallium arsenide, gallium phosphide, or gallium arsenide phosphide, is supported, p-surface down, by means of being clamped or otherwise attached to a support plate 16 which is positioned within the vacuum chamber by means of a bracket 17 attached to the base 11. A pair of boats 18 and 19 are supported from the base 11 by means of posts 21 which provide electrical and thermal insulation of the boats 18, 19 from the base 11. Preferably the boats 18 and 19 are made of metal and are arranged to be heated by passing electrical current directly through the metal of the boats. One of the boats 18 carries gold-germanium or gold-silicon alloy 22, and the other boat 19 carries a Group II metallic element, such as zinc of high purity (such as 99.999 percent purity). Preferably the aforesaid alloy is a eutectic, although in the case of gold-germanium alloy the amount of germanium can be from about 5 to 25 percent by weight of the alloy, and in the case of gold-silicon alloy the amount of silicon can be from about 4 to 10 percent by weight of the alloy.

The apparatus is evacuated, and the boat 18 containing the gold-germanium alloy 22 is heated electrically or by other means, so as to cause a layer of the alloy to become deposited on the under surface of the wafer 14 on the p-side thereof, preferably to a thickness of about 8,000 to 20,000 angstroms. The boat 19, containing the Group II metallic element such as zinc, then is heated so as to cause a layer of the Group II metallic element to become deposited against the alloy layer,

his second layer preferably being about 200 to 2,000 mgstroms in thickness, or about 1 to percent by veight of the first-deposited layer.

The wafer 14, carrying the first layer 26 of the eutecic alloy and the second layer 27 of the Group II metalic element, is placed on a strip heater 31, as shown in IG. 2, with the deposited layers 26 and 27 on upper ide, and is heated by means of electrical current from current source 32, in an inert or reducing atmosphere :such as hydrogen or nitrogen) to a temperature of lbout 450 C., momentarily, to sinter the layers 26 and 27 into the surface of the wafer 14.

At this stage, the wafer may look somewhat as shown 11 FIG. 3, and then is scribed in a criss-cross manner as ndicated by the numerals 36 in FIG. 4 to define inlividual pellets 37, and then is severed to provide a plu- 'ality of individual pellets 37. A pellet 37 is positioned, a-side down, onto a gold-plated header, as shown in ?IG. 5, in which the header 38, which may be of Kovar, s plated with a layer of gold 39. The dashed line 41 inlicates the depth of penetration into the pellet 37 of he composition of gold-germanium eutectic alloy and Group II metallic element, as has been described above. \ssuming that the wafer 37 contains a p-n junction, this unction would be located approximately as indicated by he dashed line 42, the upper portion 43 of the wafer 37 leing of n-type material.

The header 38 and pellet 37, as shown in FIG. 5, are hen heated by any convenient means, such as in a furiace or by placing the header 38 on a strip heater, in an nert or reducing atmosphere (such as hydrogen or iitrogen) to a temperature between 400" and 500 C., nomentarily, to fuse the pellet 37 to the gold-plating 59 of the header 38, which is accomplished due to meltng of the composition material which has been sintered .nto the p-surface of the pellet as described above.

FIG. 6 shows a typical header 38, with the pellet 37 bonded thereto as described above. A first lead wire 46 is attached to the header 38, and a second lead wire 47 extends through an opening in the header 38 and is atlached to and insulated from the header by means of an insulating material 48 such as glass. A dot size contact 49 is provided on the upper or n-surface of the pellet 38, by well known means, and a connector wire 51 is electrically and mechanically attached to the dot con- :act 49 and the upper end 52 of the second connector wire 47. A protective housing 56 may be positioned over and attached to the header 38, as shown in FIG. 7, and may be provided with a lens 57 in an opening at the )uter ends thereof, so that when the light-emitting diode wafer 37 emits light due to current being passed through ;he p-n junction 42 thereof by means of voltage applied 10 the lead wires 46 and 47, the emitted light will be focused by the lens 57 in a desired manner.

The electrical contact and bonding material composition of the invention, comprising a combination of gold-germanium or gold-silicon alloy and a Group II metallic element, as described above, permits bonding of the pellet 37 to the header 38 at a lower temperature, for example approximately 100 C. lower, than the temperature heretofore required for bonding p-type material directly to the gold plating 39 of the header 38. At the same time, a bond of very high mechanical strength is achieved. Thus, good bonding is achieved at reduced temperature, thus reducing the likelihood of damaging the light-emitting capability of the p-n junction diode.

The method of the invention, by applying the electrizal contact and bonding material to the p-surface of the pellets 37, permits temporary electrical connection to )e made to the p-side, while another electrical contact is made to the dot contact 49 which has been previ- JtlSlY applied to the n-side of the diode in well known manner, so that the light emission capability and other :haracteristics of the diode can be measured before the diode is bonded to a header, whereby defective diodes can be rejected before they are bonded to the relatively expensive header assembly.

The invention, in addition to achieving improved bonding at a lower temperature, also provides a highly de sirable lower resistance of the connection between the p surface and the header, resulting in increased efiiciency, greater light output, and lower heating of the lamp during operation. The amounts of the gold-germanium alloy and the Group II metallic element, are not particularly critical, and good results have been obtained using the ranges of these materials as described above.

While preferred embodiments of the invention have been shown and described, various other embodiments and modifications thereof will become apparent to persons skilled in the art, and will fall within the scope of invention as defined in the following claims.

What we claim as new and desire to secure by Letters Patent of the United States is:

[1. An ohmic contact to a Group III-V p-type material, comprising a combination of gold-germanium or goldsilicon alloy and a Group II metallic element] [2. A contact as claimed in claim 1, in which said alloy is a gold-germanium alloy having an amount of germanium that is about 5 to 25 percent by weight of the alloy] 3. A contact as claimed in claim [1] 17, in which said alloy is a gold-germanium eutectic.

4. A contact as claimed in claim [1] 17, which said alloy is a gold-silicon alloy having an amount of silicon that is about 4 to 10 percent by weight of the alloy.

5. A contact as claimed in claim [1] 17, in which said alloy is a gold-silicon eutectic.

6. A contact as claimed in claim [1] 17, in which said alloy is a gold-germanium eutectic, and in which the Group II metallic element is zinc.

7. A contact as claimed in claim 6, in which said alloy is a gold-germanium eutectic, and in which the amount of said zinc is about 1 to 15 percent by weight of said eutectic alloy.

8. A contact as claimed in claim [1] 17, in which said Group III-V material is gallium arsenide, gallium phosphide, or gallium arsenide phosphide.

[9. A solid-state lamp comprising a Group III-V material having a p-n junction at the interface of a p-type region and an n-type region, and an ohmic contact at the surface of said p-type region comprising a combination of gold-germanium or gold-silicon alloy and a Group II metallic element] [10. A lamp as claimed in claim 9, in which said alloy is a gold-germanium allo having an amount of germanium that is about 5 to 25 percent by weight of the alloy.]

11. A lamp as claimed in claim [9] 18, in which said alloy is a gold-germanium eutectic.

12. A lamp as claimed in claim [9] 18, in which said alloy is a gold-silicon alloy having an amount of silicon that is about 4 to 10 percent by weight of the alloy.

13. A lamp as claimed in claim [9] 18, in which said alloy is a gold-silicon eutectic.

14. A lamp as claimed in claim [9] 18, in which said Group II metallic element is zinc.

15. A contact as claimed in claim 14, in which said alloy is a gold-germanium eutectic, and in which the amount of said zinc is about 1 to 15 percent by weight of said eutectic alloy.

16. A lamp as claimed in claim [9] 18, in which said Group III-V material is gallium arsenide, gallium phosphide, or gallium arsenide phosphide.

17. An ohmic contact to a Group III-V p-type malerial, comprising a combination of gold-germanium or goldsih'con alloy and a Group II metallic element, said goldgermanium alloy if present having an amount of germanium that is about 5 to 25 percent by weight of the alloy.

18. A solid-state lamp comprising a Group III-V material having a p-n junction at the interface of a p-type region and an n-type region, and an ohmic contact a the 5 surface of said p-type region comprising a combination of gold-germanium 0r gold-silicon alloy and a Group II metallic element, said gold-germanium alloy if present having an amount of germanium that is about 5 to 25 percent by weight of the alloy. 5

References Cited The following references, cited by the Examiner, are of record in the patented file of this patent or the original patent.

UNITED STATES PATENTS 3,468,659 9/ 1969 Belasco 75134 3,324,361 6/1967 Belasco 317237 3,371,255 2/1968 Belasco 317--237 15 Clawson 148-179 Staples l48180 Sharpless 117213 Hayashida 29589 Kramer 250-83.l

Cox 317234 Solomon 331107 Reed 317-234 R Quetsch 317-234 R MARTIN H. EDLOW, Primary Examiner US. Cl. X.R.

317235 N, 234 L, 234 N, 237 

